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Short-gate techniques for high-speed photon counting with InGaAs/InP SPADs

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Abstract

This work shows that InGaAs/InP Single-Photon Avalanche Diodes (SPADs) can achieve high count rate (> 500 Mcps) and high detection efficiency (> 30 % at 1550 nm) when operated with sub-nanosecond gates.

© 2016 Optical Society of America

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