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Gate tunable THz Plasmon generation on graphene based semiconductor chip via backward 2nd order nonlinearity

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Abstract

We demonstrate a graphene-alumina-graphene heterostructured semiconductor chip, on which THz plasmons are generated via backward phase-matched 2nd nonlinearity all-optically. The on-chip plasmons are effectively gate tunable, with photon-efficiency ~10−4, and Q factor > 60.

© 2016 Optical Society of America

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