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Auger Recombination in Mid-Infrared Active Regions

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Abstract

We study strain effects on Auger recombination in GaInAsSb/GaSb multiple quantum well structures emitting ~3 μm, using differential reflection pump-probe and photoluminescence spectroscopy; results suggest increasing strain decreases Auger and increases radiative recombination strength.

© 2018 The Author(s)

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