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High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

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Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2×1016WHz12 noise equivalent power.

© 2019 The Author(s)

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