30-nm Consecutive Discrete Tuning Range Semiconductor Laser with 100-GHz Channel Spacing Based on Slotted Structures Fabricated by Standard Contact Lithography

Fengxin Dong; Fangling Du; Pijie Ma; Xuyan Zhou; Wanhua Zheng; Wanhua Zheng; Wanhua Zheng

doi:10.1364/CLEO_AT.2020.JTh2D.12

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper JTh2D.12
•https://doi.org/10.1364/CLEO_AT.2020.JTh2D.12

30-nm Consecutive Discrete Tuning Range Semiconductor Laser with 100-GHz Channel Spacing Based on Slotted Structures Fabricated by Standard Contact Lithography

Fengxin Dong, Fangling Du, Pijie Ma, Xuyan Zhou, and Wanhua Zheng

CLEO: QELS_Fundamental Science 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Joint Poster Session 14 (JTh2D)

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F. Dong, F. Du, P. Ma, X. Zhou, and W. Zheng, "30-nm Consecutive Discrete Tuning Range Semiconductor Laser with 100-GHz Channel Spacing Based on Slotted Structures Fabricated by Standard Contact Lithography," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper JTh2D.12.

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Abstract

A widely tunable semiconductor laser based on slotted surface grating fabricated by standard contact lithography is presented. This regrowth-free tunable semiconductor laser shows a consecutive discrete tuning range over 30-nm with 100-GHz channel spacing.

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