Electroluminescence by Impact Excitation of Excitons in a Monolayer WSe2

Jiabin Feng; Jiabin Feng; Jiabin Feng; Yongzhuo Li; Yongzhuo Li; Yongzhuo Li; Song Fu; Song Fu; Song Fu; Jianxing Zhang; Jianxing Zhang; Jianxing Zhang; Hao Sun; Hao Sun; Hao Sun; Lin Gan; Lin Gan; Lin Gan; C.Z Ning; C.Z Ning; C.Z Ning; C.Z Ning

doi:10.1364/CLEO_AT.2020.JW2F.5

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper JW2F.5
•https://doi.org/10.1364/CLEO_AT.2020.JW2F.5

Electroluminescence by Impact Excitation of Excitons in a Monolayer WSe2

Jiabin Feng, Yongzhuo Li, Song Fu, Jianxing Zhang, Hao Sun, Lin Gan, and C.Z Ning

CLEO: QELS_Fundamental Science 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Joint Poster Session 11 (JW2F)

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J. Feng, Y. Li, S. Fu, J. Zhang, H. Sun, L. Gan, and C. Z. Ning, "Electroluminescence by Impact Excitation of Excitons in a Monolayer WSe2," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper JW2F.5.

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Abstract

We demonstrated exciton electroluminescence by impact excitation in a monolayer WSe2 based field effect transistor on SiO2/Si substrate at room temperature. Hot electrons or holes can be controlled as impact sources through the back gate.

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