Plasmon-induced Charge Transport at Transition Metal Nitride-Semiconductor Interfaces via In Situ Nanoimaging

Min-Wen Yu; Min-Wen Yu; Satoshi Ishii; Satoshi Ishii; Satish Laxman Shinde; Nicholaus Kevin Tanjaya; Nicholaus Kevin Tanjaya; Kuo-Ping Chen; Tadaaki Nagao; Tadaaki Nagao

doi:10.1364/CLEO_QELS.2021.FTh2K.2

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2021),
paper FTh2K.2
•https://doi.org/10.1364/CLEO_QELS.2021.FTh2K.2

Plasmon-induced Charge Transport at Transition Metal Nitride-Semiconductor Interfaces via In Situ Nanoimaging

Min-Wen Yu, Satoshi Ishii, Satish Laxman Shinde, Nicholaus Kevin Tanjaya, Kuo-Ping Chen, and Tadaaki Nagao

CLEO: QELS_Fundamental Science 2021

San Jose, California United States
9–14 May 2021
ISBN: 978-1-943580-91-0

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Strong Coupling in Excitonic and Polaritonic Systems (FTh2K)

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M. Yu, S. Ishii, S. L. Shinde, N. K. Tanjaya, K. Chen, and T. Nagao, "Plasmon-induced Charge Transport at Transition Metal Nitride-Semiconductor Interfaces via In Situ Nanoimaging," in Conference on Lasers and Electro-Optics, J. Kang, S. Tomasulo, I. Ilev, D. Müller, N. Litchinitser, S. Polyakov, V. Podolskiy, J. Nunn, C. Dorrer, T. Fortier, Q. Gan, and C. Saraceno, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper FTh2K.2.

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Abstract

Photoexcited Kelvin probe force microscope is used to image hot carriers excited in transition metal nitride-semiconductor heterostructures. Both hot holes are hot electron injections are revealed depending on the carrier types of the semiconductors.

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