Dipole-Dipole Interactions Between Pairs of Silicon-Vacancy Centers in Diamond

Matthew W. Day; Kelsey M. Bates; Christopher L. Smallwood; Christopher L. Smallwood; Rachel C. Owen; Ronald Ulbricht; Steven T. Cundiff

doi:10.1364/CLEO_QELS.2021.FTh4L.6

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2021),
paper FTh4L.6
•https://doi.org/10.1364/CLEO_QELS.2021.FTh4L.6

Dipole-Dipole Interactions Between Pairs of Silicon-Vacancy Centers in Diamond

Matthew W. Day, Kelsey M. Bates, Christopher L. Smallwood, Rachel C. Owen, Ronald Ulbricht, and Steven T. Cundiff

CLEO: QELS_Fundamental Science 2021

San Jose, California United States
9–14 May 2021
ISBN: 978-1-943580-91-0

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Nonlinear and THz Spectroscopy for Studying Quantum Materials (FTh4L)

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M. W. Day, K. M. Bates, C. L. Smallwood, R. C. Owen, R. Ulbricht, and S. T. Cundiff, "Dipole-Dipole Interactions Between Pairs of Silicon-Vacancy Centers in Diamond," in Conference on Lasers and Electro-Optics, J. Kang, S. Tomasulo, I. Ilev, D. Müller, N. Litchinitser, S. Polyakov, V. Podolskiy, J. Nunn, C. Dorrer, T. Fortier, Q. Gan, and C. Saraceno, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper FTh4L.6.

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Abstract

Silicon-vacancy centers in diamond are leading candidates for future quantum telecommunications, memory, and computing applications. We report dipole-dipole interactions between distinct silicon-vacancy centers in diamond with implications for quantum sensing and information exchange between centers.

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