The effect of photo-carrier doping on the generation of high harmonics from MoS2

Christian Heide; Yuki Kobayashi; Yuki Kobayashi; Fang Liu; Shambhu Ghimire; Tony F. Heinz; Tony F. Heinz; Tony F. Heinz; David A. Reis; David A. Reis; David A. Reis

doi:10.1364/CLEO_QELS.2021.FTu4J.4

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2021),
paper FTu4J.4
•https://doi.org/10.1364/CLEO_QELS.2021.FTu4J.4

The effect of photo-carrier doping on the generation of high harmonics from MoS₂

Christian Heide, Yuki Kobayashi, Fang Liu, Shambhu Ghimire, Tony F. Heinz, and David A. Reis

CLEO: QELS_Fundamental Science 2021

San Jose, California United States
9–14 May 2021
ISBN: 978-1-943580-91-0

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Ultrafast XUV and X-ray Spectroscopy (FTu4J)

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C. Heide, Y. Kobayashi, F. Liu, S. Ghimire, T. F. Heinz, and D. A. Reis, "The effect of photo-carrier doping on the generation of high harmonics from MoS2," in Conference on Lasers and Electro-Optics, J. Kang, S. Tomasulo, I. Ilev, D. Müller, N. Litchinitser, S. Polyakov, V. Podolskiy, J. Nunn, C. Dorrer, T. Fortier, Q. Gan, and C. Saraceno, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper FTu4J.4.

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Abstract

We report the influence of photo-carrier doping on high-harmonic generation in monolayer MoS₂. The observed decrease in efficiency suggests a strong role for interband transitions in mid-IR driven HHG in this prototypical 2D semiconductor.

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