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In-Situ Single-Photon Detection of Er Sites in Si

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Abstract

Using sample-on-SSPD and photoluminescence excitation spectroscopy, we demonstrate Er sites in Si with inhomogeneous broadening below 100 MHz, a 350 kHz upper bound on the homogeneous linewidth, and electron T1 lower bound of 1 second.

© 2022 The Author(s)

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