A Germanium-on-Silicon Laser for On-chip Applications

Jurgen Michel; Jifeng Liu; Lionel C. Kimerling; Rodolfo Camacho-Aguilera; Jonathan T. Bessette; Yan Cai

doi:10.1364/CLEO_SI.2011.CFL3

CLEO:2011 - Laser Applications to Photonic Applications
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper CFL3
•https://doi.org/10.1364/CLEO_SI.2011.CFL3

A Germanium-on-Silicon Laser for On-chip Applications

Jurgen Michel, Jifeng Liu, Lionel C. Kimerling, Rodolfo Camacho-Aguilera, Jonathan T. Bessette, and Yan Cai

CLEO: Science and Innovations 2011

Baltimore, Maryland United States
1–6 May 2011
ISBN: 978-1-55752-910-7

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Novel Semiconductor Laser Materials (CFL)

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J. Michel, J. Liu, L. C. Kimerling, R. Camacho-Aguilera, J. T. Bessette, and Y. Cai, "A Germanium-on-Silicon Laser for On-chip Applications," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper CFL3.

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Abstract

Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important issues for electrical excitation of lasing.

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