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Extraction Efficiency Improvement of GaN Light-emitting Diode Using Sub-wavelength Nanoimprinted Patterns on Sapphire Substrate

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The sapphire substrate with sub-wavelength pattern pitch (200 nm) was fabricated by nanoimprint and has significantly enhanced the extraction efficiency of GaN LED (λ=450 nm) -- 80% more light out than the LEDs on flat sapphire substrate that grown in the same run and better than previously-reported micro-scale patterns.

© 2011 Optical Society of America

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