Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs

Not Accessible

Your library or personal account may give you access


This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs).

© 2011 Optical Society of America

PDF Article
More Like This
Enhanced vertical extraction efficiency from a thin-film InGaN/GaN photonic crystal light-emitting diodes

Chun-Feng Lai, H. W. Huang, C. H. Lin, H. C. Kuo, T. C. Lu, S. C. Wang, and Chia-Hsin Chao
JThA76 Conference on Lasers and Electro-Optics (CLEO) 2008

Growths of InGaN-Based Light-Emitting Diodes with AlInN Thin Barrier for Efficiency Droop Suppression

Guangyu Liu, Hongping Zhao, Jing Zhang, and Nelson Tansu
CMEE6 CLEO: Science and Innovations (CLEO_SI) 2011

GaN-based LEDs with Photonic Crystal Nanorod Sidewall Reflectors for Versatile Radiation Directionality Control

Yun-Wei Cheng, Szu-Chieh Wang, Yu-Feng Yin, and JianJang Huang
JWA95 CLEO: Applications and Technology (CLEO_AT) 2011


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription

Select as filters

Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved