Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs

Elizabeth Rangel; Elison Matioli; Hung-Tse Chen; Claude Weisbuch; James S. Speck; Evelyn L. Hu

doi:10.1364/CLEO_SI.2011.CMA3

CLEO:2011 - Laser Applications to Photonic Applications
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper CMA3
•https://doi.org/10.1364/CLEO_SI.2011.CMA3

Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs

Elizabeth Rangel, Elison Matioli, Hung-Tse Chen, Claude Weisbuch, James S. Speck, and Evelyn L. Hu

CLEO: Science and Innovations 2011

Baltimore, Maryland United States
1–6 May 2011
ISBN: 978-1-55752-910-7

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Efficiency Enhancement by Patterning (CMA)

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E. Rangel, E. Matioli, H. Chen, C. Weisbuch, J. S. Speck, and E. L. Hu, "Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper CMA3.

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Abstract

This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs).

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