Abstract
The growths of InGaN quantum wells light-emitting diodes with AlInN thin barrier were performed by metal-organic chemical vapor deposition, and this approach led to reduction in thermionic carrier escape and efficiency droop.
© 2011 Optical Society of America
PDF ArticleMore Like This
Hongping Zhao, Guangyu Liu, Xiao-Hang Li, Yik-Khoon Ee, Hua Tong, Jing Zhang, G.S. Huang, and Nelson Tansu
CThL1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010
Sheng-Wen Wang, Da-Wei Lin, Chia-Yu Lee, Che-Yu Liu, Yu-Pin Lan, Hao-Chung Kuo, and Shing-Chung Wang
JW2A.94 CLEO: Applications and Technology (CLEO:A&T) 2013
C. H. Wang, W. T. Chang, S. P. Chang, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang
CWF4 CLEO: Science and Innovations (CLEO:S&I) 2011