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Mode-locked Fiber Laser with Few-Layer Epitaxial Graphene Grown on 6H-SiC Substrates

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Abstract

Few-layer epitaxial graphene grown on 6H silicon carbide (SiC) wafers by thermal decomposition was used as novel saturable absorbers for mode-locking of ytterbium-doped fiber lasers, which generated 19nJ single pulse energy at 1.05MHz repetition rate.

© 2011 Optical Society of America

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