Nanolasers on Si-MOSFET: A Monolithic Integration

Fanglu Lu; Thai-Truong D. Tran; Wai Son Ko; Kar Wei Ng; Roger Chen; Connie J. Chang-Hasnain

doi:10.1364/CLEO_SI.2011.CMO2

CLEO:2011 - Laser Applications to Photonic Applications
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper CMO2
•https://doi.org/10.1364/CLEO_SI.2011.CMO2

Nanolasers on Si-MOSFET: A Monolithic Integration

Fanglu Lu, Thai-Truong D. Tran, Wai Son Ko, Kar Wei Ng, Roger Chen, and Connie J. Chang-Hasnain

CLEO: Science and Innovations 2011

Baltimore, Maryland United States
1–6 May 2011
ISBN: 978-1-55752-910-7

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Nanophotonic Integration (CMO)

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F. Lu, T. D. Tran, W. S. Ko, K. W. Ng, R. Chen, and C. J. Chang-Hasnain, "Nanolasers on Si-MOSFET: A Monolithic Integration," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper CMO2.

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Abstract

InGaAs nanopillar lasers directly grown on the gate, source and drain areas of Si-MOSFET are demonstrated for the first time using 410°C MOCVD. This represents the first monolithic integration of lasers on functional transistors.

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