Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

High Efficiency InGaN/GaN Dot-in-a-Wire Light Emitting Diodes Grown by Molecular Beam Epitaxy on Si(111)

Not Accessible

Your library or personal account may give you access

Abstract

A record high internal quantum efficiency of 36.7% was achieved for nanowire LEDs by using InGaN/GaN dot-in-a-wire heterostructures. The devices can exhibit strong green, red, and white emission, depending on the dot sizes and compositions.

© 2011 Optical Society of America

PDF Article
More Like This
Green Light Emitting Diodes with High Internal Quantum Efficiency InGaN/GaN Self-Organized Quantum Dots Grown by RF-Plasma Assisted Molecular Beam Epitaxy

Meng Zhang, Wei Guo, Animesh Banerjee, and Pallab Bhattacharya
CMKK5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010

Impact of Surface Recombination on the Performance of Phosphor-Free InGaN/GaN Nanowire White Light Emitting Diodes

S. Zhang, A. T. Connie, H. P. T. Nguyen, Q. Wang, I. Shih, and Z. Mi
AF2P.6 CLEO: Applications and Technology (CLEO:A&T) 2014

Differential Carrier Lifetimes and Efficiency of InGaN/ GaN Quantum Well and Quantum Dot Light Emitting Diodes

Animesh Banerjee, Meng Zhang, and Pallab Bhattacharya
CMU3 CLEO: Science and Innovations (CLEO:S&I) 2011

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved