Coherent and Tunable Terahertz Emission from Nano-metric Field Effect Transistor at Room Temperature

Stephane Boubanga-Tombet; Taiichi Otsuji; Frederic Teppe; Jeremy Torres; Wojciech Knap

doi:10.1364/CLEO_SI.2011.CMW4

CLEO:2011 - Laser Applications to Photonic Applications
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper CMW4
•https://doi.org/10.1364/CLEO_SI.2011.CMW4

Coherent and Tunable Terahertz Emission from Nano-metric Field Effect Transistor at Room Temperature

Stephane Boubanga-Tombet, Taiichi Otsuji, Frederic Teppe, Jeremy Torres, and Wojciech Knap

CLEO: Science and Innovations 2011

Baltimore, Maryland United States
1–6 May 2011
ISBN: 978-1-55752-910-7

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THz Sources II (CMW)

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S. Boubanga-Tombet, T. Otsuji, F. Teppe, J. Torres, and W. Knap, "Coherent and Tunable Terahertz Emission from Nano-metric Field Effect Transistor at Room Temperature," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper CMW4.

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Abstract

We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. Our results shows that properly exciting nanotransistors can pave the way for new class of coherent and easily tunable THz sources.

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