Mid-Infrared Broadband Modulation Instability and 50 dB Raman Assisted Parametric Gain in Silicon Photonic Wires

Xiaoping Liu; Bart Kuyken; Gunther Roelkens; Roel Baets; Yurii A. Vlasov; Richard M. Osgood; William M. J. Green

doi:10.1364/CLEO_SI.2011.CTuS2

CLEO:2011 - Laser Applications to Photonic Applications
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper CTuS2
•https://doi.org/10.1364/CLEO_SI.2011.CTuS2

Mid-Infrared Broadband Modulation Instability and 50 dB Raman Assisted Parametric Gain in Silicon Photonic Wires

Xiaoping Liu, Bart Kuyken, Gunther Roelkens, Roel Baets, Yurii A. Vlasov, Richard M. Osgood, and William M. J. Green

CLEO: Science and Innovations 2011

Baltimore, Maryland United States
1–6 May 2011
ISBN: 978-1-55752-910-7

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Mid-Infrared and Nonlinear Devices (CTuS)

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X. Liu, B. Kuyken, G. Roelkens, R. Baets, Y. A. Vlasov, R. M. Osgood, and W. M. J. Green, "Mid-Infrared Broadband Modulation Instability and 50 dB Raman Assisted Parametric Gain in Silicon Photonic Wires," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper CTuS2.

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Abstract

We demonstrate broadband modulation instability, > 40 dB parametric amplification with on-chip gain bandwidth > 580 nm, and narrowband Raman-assisted peak on-chip gain exceeding 50 dB, using mid-infrared dispersion-engineered silicon nanophotonic wires.

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