Optical Characterization of Semipolar GaN Light-Emitting Diodes on Sapphire

Benjamin Leung; Yu Zhang; Qian Sun; Christopher Yerino; Zhen Chen; Steve Lester; Kuan-Yung Liao; Yun-Li Li; Jung Han

doi:10.1364/CLEO_SI.2011.CWF2

CLEO:2011 - Laser Applications to Photonic Applications
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper CWF2
•https://doi.org/10.1364/CLEO_SI.2011.CWF2

Optical Characterization of Semipolar GaN Light-Emitting Diodes on Sapphire

Benjamin Leung, Yu Zhang, Qian Sun, Christopher Yerino, Zhen Chen, Steve Lester, Kuan-Yung Liao, Yun-Li Li, and Jung Han

CLEO: Science and Innovations 2011

Baltimore, Maryland United States
1–6 May 2011
ISBN: 978-1-55752-910-7

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Toward More Efficient Visible LEDs (CWF)

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B. Leung, Y. Zhang, Q. Sun, C. Yerino, Z. Chen, S. Lester, K. Liao, Y. Li, and J. Han, "Optical Characterization of Semipolar GaN Light-Emitting Diodes on Sapphire," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper CWF2.

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Abstract

Semipolar (11-22) GaN light-emitting diodes are grown on sapphire substrates by orientation controlled epitaxy. Optical emission properties are investigated, and narrow linewidth emission is shown for devices on this low dislocation density template.

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