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Electro-Optical Modulator Based on the p+-n+-n+ Transistor Structure Integrated on SOI Substrate

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Abstract

We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

© 2011 Optical Society of America

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