Add to BibSonomyAbstract
We fabricated a 99-μm-long-cavity broad-area laser diode involving 19 stacked InGaAs quantum dots, which lased at 1013 nm without any HR coating, and the threshold current density was 2.25 kA/cm2.
© 2012 Optical Society of America
PDF ArticleMore Like This
Fabrication of highly stacked quantum dot laser
Kouichi Akahane, Naokatsu Yamamoto, and Tetsuya Kawanishi
JThE19 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009
Characterization of 24 Stacked InGaAs Quantum Dot Laser Fabricated by Ultrahigh-rate MBE Growth Technique
F. Tanoue, H. Sugawara, K. Akahane, and N. Yamamoto
TuPK_4 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013
1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates with Current Injection across Direct-Bonded GaAs/Si Heterointerfaces
Katsuaki Tanabe, Katsuyuki Watanabe, Stephane Faure, and Yasuhiko Arakawa
Tu.6.LeSaleve.1 European Conference and Exposition on Optical Communications (ECOC) 2011