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Conferences > CLEO_SI > 2012 > CTh4M > CTh4M.6

Characteristics of an Electrically Pumped GaN-based Microcavity Light Emitter with an AlN Current Blocking Layer

Bo-Siao Cheng, Tzeng-Tsong Wu, Ying-You Lai, Yun-Lin Wu, Cheng-Hung Chen, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang

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Abstract

We demonstrate a GaN-based microcavity light emitter (MCLE) with an AlN current blocking layer. An AlN layer is inserted on the InGaN/GaN multiple quantum wells as a current blocking layer and an optical confinement layer.

© 2012 Optical Society of America

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