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Indirectly Pumped THz InGaAs/InAlAs Quantum-Cascade Lasers Grown by Metal-Organic Vapor-Phase Epitaxy

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Abstract

We present the operation of indirectly pumped InGaAs/InAlAs THz quantum-cascade lasers of which active/injector structures were grown by MOVPE. A laser exhibits a low threshold-current-density of ~560 A/cm2 at 7 K and a Tmax~84 K.

© 2012 Optical Society of America

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