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Ultrahigh Sensitive Plasmonic Terahertz Detection Using Asymmetric Dual-Grating Gate HEMT Structures

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Abstract

We report on ultrahigh sensitive broadband terahertz detection using asymmetric double-grating-gate high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz.

© 2012 Optical Society of America

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