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Selective-Area Growth of Ge and Ge/SiGe Quantum Wells in 3 μm Silicon-on-Insulator Waveguides

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Abstract

We demonstrate a robust process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 μm thick silicon-on-insulator waveguides, eliminating sidewall growth and hence facilitating low-insertion-loss optical modulators.

© 2012 Optical Society of America

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