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Conferences > CLEO_SI > 2012 > CTu2J > CTu2J.7

Dilute-Nitride Active Regions on GaSb for Mid-Infrared Semiconductor Diode Lasers

Hari P. Nair, Adam M. Crook, and Seth R. Bank

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Abstract

We present the first room-temperature photoluminescence from GaSb-based dilute-nitrides, enabled by minimizing the incorporation of non-radiative defects. This material system could provide a pathway for covering the 3-5 μm regime with diode lasers.

© 2012 Optical Society of America

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