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Conferences > CLEO_SI > 2012 > CTu2J > CTu2J.8

Nanofabrication of Quantum Dots on InP by In-Situ Etching and Selective Growth

Y. Huang, T. Kim, T. Garrod, L. J. Mawst, S. Xiong, P. F. Nealey, K. Schulte, and T. F. Kuech

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Abstract

Diblock copolymer lithography followed by selective growth is used for the nanofabrication of InGaAs quantum dots (QDs) on InP substrate. Stronger photoluminescence intensity is observed when in-situ CBr4 etching is employed prior to QD growth.

© 2012 Optical Society of America

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