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Conferences > CLEO_SI > 2012 > CTu2N > CTu2N.4

384 nm AlGaN Diode Lasers on Relaxed Semipolar Buffers

D. A. Haeger, E. C. Young, R. B. Chung, F. Wu, A. E. Romanov, S. Nakamura, S. P. DenBaars, J. S. Speck, and D. A. Cohen

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Abstract

We report operation of AlGaN laser diodes grown on semipolar buffer layers partially relaxed by misfit dislocation formation at heterointerfaces remote from the active region. This approach offers a pathway to mid-UV AlGaN based lasers.

© 2012 Optical Society of America

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