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Conferences > CLEO_SI > 2013 > CF1I > CF1I.2

InAs Quantum Dot Growth Using Bismuth as a Surfactant for Optoelectronic Applications

Vaishno D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank

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Abstract

We report the use of a bismuth surfactant to increase self-assembled InAs quantum dot emission intensity, decrease the linewidth, and extend the emission wavelength with increasing InAs deposition, without the concomitant loss of dot density.

© 2013 Optical Society of America

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