Abstract
We characterized luminescent properties of InGaN nanodisks in both quantum well and dot regimes. The luminescent efficiency increases as strain is relaxed in the quantum well but peaks at the transition from well to dot.
© 2013 Optical Society of America
PDF ArticleMore Like This
Cheng-Yu Chang and Yuh-Renn Wu
JWA79 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009
Sang-Tae Lee, Hyo-Seok Choi, Byung-Guon Park, Kyung-Jin Kim, Moon-Deock Kim, Song-Gang Kim, and Woo-chul Yang
JTh2A.102 CLEO: QELS_Fundamental Science (CLEO:FS) 2013
Shu-Ting Yeh and Yuh-Renn Wu
TuPH_8 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013