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Defect-State-Absorption Photocurrent in PN-Diode-Integrated Silicon Microring Resonators

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Abstract

We report defect-state-absorption photocurrent in PN-diode-integrated silicon microrings at 1550 nm. We demonstrate a cavity-enhanced responsivity of 3.1 mA/W upon 0 V, and 173 mA/W upon -10 V with a 3dB bandwidth of 10 GHz.

© 2013 Optical Society of America

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