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Study of Temperature-Dependent Carrier Transport in a p-GaN/i-InGaN/n-GaN Solar Cell Heterostructure using Ultrafast Spectroscopy

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Abstract

Temperature-dependent carrier transport is investigated using ultrafast spectroscopy in a p-GaN/i-InGaN/n-GaN solar cell with heavily-doped layers to compensate for polarization charges at the hetero-interface. We observe a flip in the transport direction at 110 K.

© 2013 Optical Society of America

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