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Conferences > CLEO_SI > 2013 > CTh3L > CTh3L.3

CMOS Compatible Argon-Ion-Implanted C-Band Silicon Waveguide Photodetector

Brian Souhan, Richard R. Grote, Jeffrey B. Driscoll, Hassaram Bakhru, and Richard M. Osgood

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Abstract

Extrinsic Si waveguide photodiodes created through Ar+ implantation are shown to be stable up to 350°C with 0.29 A/W internal quantum efficiency and 10 GHz frequency response. Similar Si+ implantation defects anneal out at 300°C.

© 2013 Optical Society of America

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