Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Characterization of APD- PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

Not Accessible

Your library or personal account may give you access

Abstract

We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

© 2013 Optical Society of America

PDF Article
More Like This
RF Response of PIN Photodiode with Avalanche Multiplication Using Quantum Dots

T. Umezawa, K. Akahane, A. Kanno, and T. Kawanishi
WK1_4 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013

Application of InAs quantum dots for high-speed photodiodes in fiber optics

T. Umezawa, K. Akahane, A. Kanno, and T. Kawanishi
CI_2_1 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2013

Improvement of photodiode responsivity using the InAs quantum dot family for monolithic integration

T. Umezawa, K. Akahane, A. Kanno, and T. Kawanishi
SM4G.7 CLEO: Science and Innovations (CLEO:S&I) 2014

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved