Electro-mechanical Detection of Near Infrared Optical Intensity Modulation in Silicon

Siddharth Tallur; Sunil A. Bhave

doi:10.1364/CLEO_SI.2013.CW1F.4

CLEO: 2013
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper CW1F.4
•https://doi.org/10.1364/CLEO_SI.2013.CW1F.4

Electro-mechanical Detection of Near Infrared Optical Intensity Modulation in Silicon

Siddharth Tallur and Sunil A. Bhave

CLEO: Science and Innovations 2013

San Jose, California United States
9–14 June 2013
ISBN: 978-1-55752-972-5

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Opto-mechanical Systems I (CW1F)

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S. Tallur and S. A. Bhave, "Electro-mechanical Detection of Near Infrared Optical Intensity Modulation in Silicon," in CLEO: 2013, OSA Technical Digest (online) (Optica Publishing Group, 2013), paper CW1F.4.

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Abstract

We report chip-scale electro-mechanical detection of near-IR optical intensity modulation at 174.2MHz and 1.198GHz in silicon. This constitutes the first experimental demonstration of a photon to phonon translator in a CMOS compatible platform.

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