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32 µW pulsed terahertz emission from high mobility InAlAs/InGaAs multi-nanolayer structures

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We measured pulsed THz emission from high-mobility MBE grown InGaAs/InAlAs multi-nanolayer structures. The detected average THz power was 32 µW at 32 mW optical excitation power. The bandwidth of the THz pulses exceeds 4 THz.

© 2013 Optical Society of America

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