Abstract
We designed and fabricated InP-based high electron mobility transistors featuring an asymmetric chirped dual-grating-gate structure with a resonant-enhanced photonic vertical cavity. The device structure greatly enhances the Doppler-effect-driven plasma instability, resulting in intense monochromatic superradiant terahertz emission at 3.55 THz at 140K for the first time.
© 2013 Optical Society of America
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