Near Infrared light emitting from InN/InGaN/GaN Dot-in-a-Nanorod Heterostructure

Sang-Tae Lee; Hyo-Seok Choi; Byung-Guon Park; Kyung-Jin Kim; Moon-Deock Kim; Song-Gang Kim; Woo-chul Yang

doi:10.1364/CLEO_QELS.2013.JTh2A.102

CLEO: 2013
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper JTh2A.102
•https://doi.org/10.1364/CLEO_QELS.2013.JTh2A.102

Near Infrared light emitting from InN/InGaN/GaN Dot-in-a-Nanorod Heterostructure

Sang-Tae Lee, Hyo-Seok Choi, Byung-Guon Park, Kyung-Jin Kim, Moon-Deock Kim, Song-Gang Kim, and Woo-chul Yang

CLEO: Science and Innovations 2013

San Jose, California United States
9–14 June 2013
ISBN: 978-1-55752-972-5

From the session
POSTER SESSION III: Light-Matter Interactions, ultrafast & Quantum Optics (JTh2A)

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S. Lee, H. Choi, B. Park, K. Kim, M. Kim, S. Kim, and W. Yang, "Near Infrared light emitting from InN/InGaN/GaN Dot-in-a-Nanorod Heterostructure," in CLEO: 2013, OSA Technical Digest (online) (Optica Publishing Group, 2013), paper JTh2A.102.

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Abstract

We report on the light emitting of InN/InGaN/GaN dot-in-a-nanorods heterostructure grown on Si(111) substrates using plasma-assisted molecular beam epitaxy. Sharp and isolated single exciton emission line in the near infrared spectral range was observed.

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