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760-nm Semiconductor Passively Mode-Locked Monolithic Laser for Picosecond Pulse Generation

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Abstract

We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ~5 ps.

© 2013 Optical Society of America

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