Anisotropic Structure Induced Electrical Properties of A-plane InN

P.-H. Chang; J.-W. Chia; S. Gwo; H. Ahn

doi:10.1364/CLEO_QELS.2013.JTh2A.56

CLEO: 2013
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper JTh2A.56
•https://doi.org/10.1364/CLEO_QELS.2013.JTh2A.56

Anisotropic Structure Induced Electrical Properties of A-plane InN

P.-H. Chang, J.-W. Chia, S. Gwo, and H. Ahn

CLEO: Science and Innovations 2013

San Jose, California United States
9–14 June 2013
ISBN: 978-1-55752-972-5

From the session
POSTER SESSION III: Light-Matter Interactions, ultrafast & Quantum Optics (JTh2A)

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P. -. Chang, J. -. Chia, S. Gwo, and H. Ahn, "Anisotropic Structure Induced Electrical Properties of A-plane InN," in CLEO: 2013, OSA Technical Digest (online) (Optica Publishing Group, 2013), paper JTh2A.56.

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Abstract

Terahertz spectroscopy reveals that the anisotropic electrical properties of nonpolar InN film along in-plane c-axis and in-plane m-axis are determined by the orientation of narrow and thin stacking faults, not by the density of defects.

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