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Investigation of Nano-Sized Hole/Post Patterned Sapphire Substrates-Induced Strain-Related Quantum-Confined Stark Effect of InGaN-Based Light-Emitting Diodes

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Abstract

This paper demonstrates that the efficiency of InGaN-based light-emitting diodes with nano-post patterned sapphire substrates is superior to that with nano-hole patterned sapphire substrates under the same nano-scale feature owing to reduced quantum-confined stark effect.

© 2013 Optical Society of America

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