Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO_SI > 2014 > JTh2A > JTh2A.77

InGaAs/GaAs quantum well laser with broad spectrum of stimulated emission at 1.06 µm

Huolei Wang, Junping Mi, Laura Meriggi, Matthew Steer, Weixi Chen, Jiaoqing Pan, and Ying Ding

Not Accessible

Your library or personal account may give you access

Abstract

We report the first demonstration to our knowledge of quantum well laser having a broadband lasing spectrum of 38 nm at a center wavelength of 1.06 µm with a pulsed output power of ~50 mW.

© 2014 Optical Society of America

PDF Article
This paper was not presented at the conference
More Like This
Experimental observation of optical phase conjugation in InGaAs/GaAs multiple quantum wells at 1.06 µm wavelength

Yang Zhao, Cunkai Wu, Pankaj Shah, M. K. Kim, and L. Ralph Dawson
CThS37 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

Direct Growth of GaAs-based Long-wavelength (1.55μm) InGaAs/InGaAsP Multiple Quantum Wells Laser

Xibo Li, Yongqing Huang, Jun Wang, Xiaofeng Duan, Ruikang Zhang, Xiaomin Ren, Xia Zhang, and Qi Wang
ATh3A.2 Asia Communications and Photonics Conference (ACP) 2014

Over-1.5-µm emissions at room temperature of InAs quantum dots in strained InGaAs quantum well

Jun Tatcbayashi, Masao Nishioka, and Yasuhiko Arakawa
QMJ6 Quantum Electronics and Laser Science Conference (CLEO:FS) 2001

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use