Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO_SI > 2014 > SM1J > SM1J.2

Temperature dependence of Sub-220nm Emission from GaN/AlN Quantum Structures by Plasma Assisted Molecular Beam Epitaxy

SM Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma

Not Accessible

Your library or personal account may give you access

Abstract

GaN/AlN structures are utilized to achieve deep-UV emission. By reducing thickenss of GaN QW to 1 ML, 224nm emission is achieved. A further shift to 219 nm is gettable as GaN islands are introduced.

© 2014 Optical Society of America

PDF Article
More Like This
High Internal Quantum Efficiency from AlGaN-delta-GaN Quantum Well at 260 nm

Cheng Liu, Kevin Lee, Galen Harden, Anthony Hoffman, Huili (Grace) Xing, Debdeep Jena, and Jing Zhang
AF1I.2 CLEO: Applications and Technology (CLEO:A&T) 2020

High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy

Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, and Hieu Pham Trung Nguyen
STu3P.4 CLEO: Science and Innovations (CLEO:S&I) 2020

Sub-250nm room temperature optical gain from AlGaN/AlN multiple quantum wells structures

Emanuele Francesco Pecora, Wei Zhang, Lin Zhou, David J. Smith, Jian Yin, Roberto Paiella, Luca Dal Negro, and Theodore D. Moustakas
CTh3D.5 CLEO: Science and Innovations (CLEO:S&I) 2012

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use