Abstract

We demonstrate selective-area growth of patterned III-nitride core-shell nanowalls with nonpolar InGaN quantum well shells over large areas. Transmission electron microscopy and photoluminescence are utilized to examine the growth morphology and emission characteristics.

© 2014 Optical Society of America

PDF Article
More Like This
Growth Evolution and Time-Resolved Photoluminescence Studies of III-Nitride Light-Emitting Diodes Grown by Abbreviated Growth Mode on Patterned AGOG Substrate

Yik-Khoon Ee, Xiao-Hang Li, J. M. Biser, W. Cao, Helen M. Chan, R. P. Vinci, and Nelson Tansu
CMB2 Conference on Lasers and Electro-Optics (CLEO) 2010

Group III-Nitride Semiconductor Nanostructures for Novel Photonic and Quantum Photonic Applications

Je-Hyung Kim, Young-Ho Ko, Suk-Min Ko, Su-Hyun Gong, and Yong-Hoon Cho
AW4A.4 Asia Communications and Photonics Conference (ACPC) 2014

Nonpolar InGaN/GaN multi-quantum-well core-shell nanowire lasers

Changyi Li, Jeremy B. Wright, Sheng Liu, Ping Lu, Jeffrey J. Figiel, Benjamin Leung, Ting Shan Luk, Igal Brener, Daniel Feezell, S. R. J. Brueck, and George T. Wang
SM2F.2 CLEO: Science and Innovations (CLEO_SI) 2015

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription