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Tensile-strained, Heavily N-doped Germanium-On-Insulator for Light Emitting Devices on Silicon

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Abstract

Strong direct gap light emission is obtained from germanium-on-insulator (GOI) with tensile strain of 0.16% and ultra-high n-type doping concentration up to 1.0×1020 cm−3. Microdisk resonators are also fabricated on GOI and show modulated emission spectra.

© 2014 Optical Society of America

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