Exciton-related electroluminescence from monolayer MoS2

Yu Ye; Ziliang Ye; Majid Gharghi; Xiaobo Yin; Hanyu Zhu; Mervin Zhao; Xiang Zhang

doi:10.1364/CLEO_SI.2014.STh4B.4

CLEO: 2014
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper STh4B.4
•https://doi.org/10.1364/CLEO_SI.2014.STh4B.4

Exciton-related electroluminescence from monolayer MoS₂

Yu Ye, Ziliang Ye, Majid Gharghi, Xiaobo Yin, Hanyu Zhu, Mervin Zhao, and Xiang Zhang

CLEO: Science and Innovations 2014

San Jose, California United States
8–13 June 2014
ISBN: 978-1-55752-999-2

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Laser-Driven Dynamics in Materials (STh4B)

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Y. Ye, Z. Ye, M. Gharghi, X. Yin, H. Zhu, M. Zhao, and X. Zhang, "Exciton-related electroluminescence from monolayer MoS2," in CLEO: 2014, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper STh4B.4.

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Abstract

We studied the microscopic origin of the electroluminescence from monolayer MoS₂ fabricated on a heavily p-type doped silicon substrate. Auger recombination of the exciton-exciton annihilation of bound exciton emission is observed.

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