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Conferences > CLEO_SI > 2014 > STu1I > STu1I.6

Growth of device-quality orientation-patterned gallium phosphide (OP-GaP) by improved hydride vapour phase epitaxy

Peter G. Schunemann, Lee Mohnkern, Alice Vera, Xiaoping S. Yang, Angie C. Lin, James S. Harris, Vladimir Tassev, and Michael Snure

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Abstract

Substantial increases in substrate temperature, super-saturation, and V/III ratio have dramatically improved vertical domain propagation during hydride vapour phase epitaxy of orientation-patterned gallium phosphide, leading to device-quality quasi-phasematched layer thicknesses exceeding 400 microns.

© 2014 Optical Society of America

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