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Photodetector based on lateral graphene p-n junction created by electron-beam irradiation

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Abstract

Graphene p-n junctions fabricated by electron irradiation method that induces n-type doping in the intrinsic p-type graphene are demonstrated. Photoresponse was obtained because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential.

© 2015 Optical Society of America

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