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A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response

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Abstract

An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

© 2015 Optical Society of America

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